CMP Polishing Slurry
WEC CMP-A1 polishing slurry containing nano-SiO2 abrasive, and has precise formula proportions, pH value between 9 and 11.
he polishing slurry has effective removal of the material surface due to grinding and left very shallow scratches. Can be used for polishing soft or hard material , such as silicon, cadmium telluride, gallium arsenide, glass ceramics, glass, quartz, sapphire and metal.
Application
Available in soft or hard materials polishing : ex: Sapphire, Silicon Carbide, Silicon, Fused & Crystalline quartz/fused silica, Glass, Glass ceramic & Meta so on.
Specification
Model |
CMP-A1 |
Exterior |
White liquid |
Solid ratio |
40±2% |
Boiling point |
100℃ |
Specific Gravity (Water = 1) |
1.3±0.2 Kg/m3（20 ℃） |
Viscosity (cp) / temperature (at 25℃) |
＜50mPa.s |
pH value |
pH=9~11 |
Abrasive size |
Mean ≒ 80nm |
Abrasive |
SiO2 |
Ra |
0.35~0.48nm |
Dilution ratio |
1：1 |